NX1029XH

Производитель :

Nexperia USA Inc.

Категория товара :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

330mA (Ta), 170mA (Ta)

Drain to Source Voltage (Vdss) :

50V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel Complementary

Gate Charge (Qg) (Max) @ Vgs :

600pC @ 4.5V, 350pC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V, 36pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

330mW (Ta), 1.09W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V

Supplier Device Package :

SOT-666

Vgs(th) (Max) @ Id :

2.1V @ 250µA