EPC2010C

Производитель :

EPC

Категория товара :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

22A (Ta)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.3 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

540 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Die

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

25mOhm @ 12A, 5V

Supplier Device Package :

Die

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

+6V, -4V

Vgs(th) (Max) @ Id :

2.5V @ 3mA