EPC2033

Производитель :

EPC

Категория товара :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

48A (Ta)

Drain to Source Voltage (Vdss) :

150 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

1140 pF @ 75 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

Die

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

7mOhm @ 25A, 5V

Supplier Device Package :

Die

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 9mA