2N7002P,235

Производитель :

Nexperia USA Inc.

Категория товара :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

360mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.8 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

50 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

350mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.6Ohm @ 500mA, 10V

Supplier Device Package :

TO-236AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 250µA